Effect of the C-bridge length on the ultraviolet-resistance of oxycarbosilane low-k films

The ultra-violet (UV) and vacuum ultra-violet (VUV) resistance of bridging alkylene groups in organosilica films has been investigated. Similar to the Si-CH3 (methyl) bonds, the Si-CH2-Si (methylene) bonds are not affected by 5.6 eV irradiation. On the other hand, the concentration of the Si-CH2-CH2-Si (ethylene) groups decreases during such UV exposure. More significant difference in alkylene reduction is observed when the films are exposed to VUV (7.2 eV). The ethylene groups are depleted by more than 75% while only about 40% methylene and methyl groups loss is observed. The different sensitivity of bridging groups to VUV light should be taken into account during the development of curing and plasma etch processes of low-k materials based on periodic mesoporous organosilicas and oxycarbosilanes. The experimental results are qualitatively supported by ab-initio quantum-chemical calculations

data of " A detailed EP and PAS study of porous structure of OSG films with various ratios of methyl terminal and ethylene bridging groups"

Raw data of "A detailed EP and PAS study of porous structure of OSG films with various ratios of methyl terminal and ethylene bridging groups"- The positron part only